bc847bvn document number: ds30627 rev. 7 - 2 1 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn complementary pair small signal surface mount trans istor features ? epitaxial die construction ? two internally isolated npn/pnp transistors in one package ? ultra-small surface mount package ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. "green" device (note 3) ? qualified to aec-q101 standards for high reliabilit y ? ppap capable (note 4) mechanical data ? case: sot563 ? case material: molded plastic, ?green? molding com pound. ? ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.003 grams (approximate) ordering information (notes 4 & 5) part number compliance marking reel s ize (inches) tape w idth (mm) quantity per r eel bc847bvn-7 aec-q101 kaw 7 8 3,000 BC847BVNQ-7 automotive kaw 7 8 3,000 notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standar d products are electrically and thermally the same, except where specified. for more informa tion, please refer to http://www.diodes.com/quality /product_compliance_definitions/. 5. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 2017 code x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view device schematic top view c 1 q 1 q 2 b 2 e 2 c 2 e 1 b 1 kaw = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) kaw ym sot563 s ot563
bc847bvn document number: ds30627 rev. 7 - 2 2 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn maximum ratings: npn, bc847b type (q 1 ) (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6 v collector current i c 100 ma peak collector current i cm 200 ma peak emitter current i em 200 ma maximum ratings: pnp, bc857b type (q 2 ) (@t a = +25c unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -6 v collector current i c -100 ma peak collector current i cm -200 ma peak emitter current i em -200 ma thermal characteristics ? total device (@t a = +25c unless otherwise specified.) characteristic symbol value unit power dissipation (note 6) total device p d 150 mw thermal resistance, junction to ambient (note 6) r ja 833 c/w operating and storage temperature range t j , t stg -65 to +150 c note: 6. for a device surface mounted on minimum recommended pad layout fr-4 pcb with single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state con dition. electrical characteristics: npn, bc847b type (q 1 ) (@t a = +25c unless otherwise specified.) characteristic (note 7 ) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 ? ? v i c = 100a, i b = 0 collector-emitter breakdown voltage bv ceo 45 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 6 ? ? v i e = 100a, i c = 0 dc current gain h fe 200 290 450 ? v ce = 5.0v, i c = 2.0ma collector-emitter saturation voltage v ce(sat) ? 90 200 250 600 mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 700 900 ? mv i c = 10ma, i b = 0.5ma i c = 100ma, i b = 5.0ma base-emitter voltage v be(on) 580 ? 660 ? 700 720 mv v ce = 5.0v, i c = 2.0ma v ce = 5.0v, i c = 10ma collector-cutoff current i cbo ? ? ? ? 15 5.0 na a v cb = 30v v cb = 30v, t a = +150c gain bandwidth product f t 100 300 ? mhz v ce = 5.0v, i c = 10ma, f = 100mhz collector-base capacitance c cbo ? 3.5 6.0 pf v cb = 10v, f = 1.0mhz note: 7. short duration pulse test used to minimize self-heating effect.
bc847bvn document number: ds30627 rev. 7 - 2 3 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn electrical characteristics: pnp, bc857b type (q 2 ) (@t a = +25c unless otherwise specified.) characte ristic (note 8 ) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 ? ? v i c = -100a, i b = 0 collector-emitter breakdown voltage bv ceo -45 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage bv ebo -6 ? ? v i e = -100a, i c = 0 dc current gain h fe 220 290 475 ? v ce = -5.0v, i c = -2.0ma collector-emitter saturation voltage v ce(sat) ? -75 -250 -300 -650 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter saturation voltage v be(sat) ? -700 -850 ? -950 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter voltage v be(on) -600 ? -650 ? -750 -820 mv v ce = -5.0v, i c = -2.0ma v ce = -5.0v, i c = -10ma collector-cutoff current i cbo ? ? ? ? -15 -4.0 na a v cb = -30v v cb = -30v, t a = +150c gain bandwidth product f t 100 200 ? mhz v ce = -5.0v, i c = -10ma, f = 100mhz collector-base capacitance c cbo ? 3 4.5 pf v cb = -10v, f = 1.0mhz note: 8. short duration pulse test used to minimize self-heating effect. thermal characteristics ? total device -50 0 50 100 150 200 150 50 100 0 t , ambient temperature ( c) figure 1. power dissipation vs. ambient temperature total device a p , p o w e r d i s s i p a t i o n ( m w ) d r = 833 c/w ja 1 10 100 1,000 1.0 10 100 0.1 0.01 h d c c u r r e n t g a i n fe, i , collector current (ma) figure 2. typical dc current gain vs. collector cu rrent (bc847b type) c 6 10 c a p a c i t a n c e ( p f ) v , reverse voltage (v) figure 4. typical capacitance characteristics (bc8 47b type) r c obo c ibo f = 1mhz 0 0.1 0.2 0.3 0.4 0.5 0.1 1.0 10 100 v , c o l l e c t o r - e m i t t e r saturation voltage (v) ce i , collector current (ma) figure 3. typical collector-emitter saturation vol tage vs. collector current (bc847b type) c i i = 20 cb t = 100 c a t = 25 c a t = -50 c a
bc847bvn document number: ds30627 rev. 7 - 2 4 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn 10 100 1,000 0.1 1.0 10 100 f , g a i n - b a n d w i d t h p r o d u c t ( m h z ) t i , collector current (ma) figure 5. typical gain-bandwidth product vs. collector current (bc847b type) c t = 25 c a v = 10v ce v = ce 5v v = ce 2v -1 -10 -100 -1,000 -1 -10 -100 -1,000 h , d c c u r r e n t g a i n f e i , collector current (ma) figure 6. typical dc current gain vs. collector cu rrent (bc857b type) c -1 -0.1 -10 -100 -1,000 v , c o l l e c t o r - e m i t t e r saturation voltage (v) ce(sat) i , collector current (ma) figure 7. typical collector-emitter saturation vol tage vs. collector current (bc857b type) c t = 25c a t = -50c a t = 150c a 0 -0.1 -0.2 -0.3 -0.4 -0.5 i c i b = 10 6 10 cibo cobo c a p a c i t a n c e ( p f ) v , reverse voltage (v) figure 8. typical capacitance characteristics (bc8 57b type) r f = 1mhz -10 -100 -1,000 -1 -10 -100 f , g a i n - b a n d w i d t h p r o d u c t ( m h z ) t i , collector current (ma) figure 9. typical gain-bandwidth product vs. collector current (bc857b type) c
bc847bvn document number: ds30627 rev. 7 - 2 5 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
bc847bvn document number: ds30627 rev. 7 - 2 6 of 6 www.diodes.com march 2015 ? diodes incorporated bc847bvn important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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